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| PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 JUNE 94 FEATURES * 60 Volt VCEO * Gain of 10k at IC=100mA MPSA77P C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg -60 -60 -10 E-Line TO92 Compatible VALUE UNIT V V V mA mW C -500 625 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter On Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(on) 10k 10k MIN. -60 -60 -10 -100 -500 -100 -1.5 -2 TYP. MAX. UNIT V V V nA nA nA V V CONDITIONS. IC=-100A, IE=0 IC=-100A, IB=0* IE=-10A, IC=0 VCB=-50V, IE=0 VCE=-50V VEB=-10V, IC=0 IC=-100mA, IB=-0.1mA* IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=5V* Static Forward Current hFE Transfer Ratio *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-83 |
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